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Performance of the 256 x 256 InSb Chip at NOAO (1Sep93)
(from ETS, NOAO Newsletter No. 35, 1 September 1993)

Lab testing has been completed, and the 256 x 256 InSb array is now in
the Cryogenic Optical Bench, where it has undergone additional testing
in the lab and on the mountain. An additional engineering array is
still being tested in the lab to develop techniques for reading the
device at 30 frames/second, which is needed for 4 um and 5 um work. At
the present time we have achieved 65 millisecond frame rates with an
additional 65 milliseconds overhead using the reset-read-read
technique with very good results. The significant improvement is that
the full well capacity is over 100,000 electrons with 600 mv applied
bias.  At these bias levels dark current of less than 0.5 electrons/sec
is achieved. At higher biases (1 v) we have gotten full well capacities
of 250,000 electrons. It may be possible to push that to 300,000 with
additional voltage adjustments. The operating voltage levels and
clocking techniques used at NOAO can be obtained by contacting the
author.

Al Fowler

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